Effect of counter-surface chemical activity on mechanochemical removal of GaAs surface

Using atomic force microcopy, mechanochemical removal behaviors of GaAs surface slid by Al2O3, SiO2, and CeO2 micro-spherical tips were investigated in ambient environment. High-resolution transmission electron microscope characterization demonstrates that defect-free material was achieved on under the contact pressures much below yield limit plastic deformation, which can be ascribed to water-participated reactions. Further analysis indicates interfacial reactions are strongly affected counter-surface chemistry. Nano abrasive with low chemical activity inhibits reaction via increasing activation energy formation bonding bridges, but there is no obvious difference mechanically weakening process for rupture Ga?As bond substrate.